In:
International Journal of Photoenergy, Hindawi Limited, Vol. 2012 ( 2012), p. 1-6
Abstract:
For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V oc and FF. RIE texturing with a proper DRE had sufficiently higher short circuit current ( I s c ) than acidic-textured samples without a drop in open circuit voltage ( V oc ) . And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200 mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO 3 /HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.
Type of Medium:
Online Resource
ISSN:
1110-662X
,
1687-529X
Language:
English
Publisher:
Hindawi Limited
Publication Date:
2012
detail.hit.zdb_id:
2028941-8
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