In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 555 ( 2007-9), p. 113-118
Abstract:
We present a study of the photoresist (PR) etching and the low-k materials damage using a
ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching
rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.555
DOI:
10.4028/www.scientific.net/MSF.555.113
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2007
detail.hit.zdb_id:
2047372-2
Bookmarklink