In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 10R ( 1994-10-01), p. 5807-
Abstract:
In this paper, the potential of high conversion efficiency of solar energy through the
combination of Al 0.2 Ga 0.8 As and Si cells is illustrated by a mechanically
stacked tandem using, for the first time, the epitaxial lift-off (ELO) technique to remove the top cell from its substrate. The selective etching of the GaAs substrate
provides efficient light transmission to the bottom cell. Photoluminescence decay experiments show that substrate removal also enhances photon recycling effects. The
measured efficiency of the Al 0.2 Ga 0.8 As/Si tandem reaches 21% AM1.5.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.5807
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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