In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 4 ( 2022-04-01), p. 045013-
Abstract:
AlGaN/GaN heterostructure lateral Schottky barrier diodes (SBDs) with TiN and NiN dual anode (DA) on sapphire substrates are investigated in this letter. The NiN anode with its high work-function leads to low leakage current and high breakdown voltage, while TiN anode with its low work-function determines the low turn-on voltage of the DA SBDs. Tunable turn-on voltage and leakage current are obtained in the DA SBDs by varying the radius of the TiN anode. As the radius of the TiN anode decreases from 80 to 8 μ m, the turn-on voltage increases from 0.64 to 0.94 V, while the reverse leakage current decreases from 1 × 10 −2 to 1 × 10 −4 mA mm −1 at a reverse bias of −10 V and cathode–anode distance of 20 μ m. The differential specific on-resistance at 100 mA mm −1 is 4.5 mΩ cm 2 and barely changes with various radius of the TiN anode. A high breakdown voltage of 1.49 kV is achieved in the AlGaN/GaN DA SBDs with the radius of 80 μ m of the TiN anode, obtaining a power Baliga’s figure of merit of 0.48 GW cm −2 at the cathode–anode distance of 20 μ m. Besides, dynamic on-resistance increases less than 15% under pulse voltage bias at −60 V which may account on the good interface between metal nitrides and AlGaN, which is beneficial to the high frequency and high power application.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac5676
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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