In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 2R ( 2012-02-01), p. 025505-
Abstract:
2.2-µm-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded Al x Ga 1- x N layers. With the increase of the graded Al x Ga 1- x N layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-Al x Ga 1- x N layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1×1 cm 2 larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.025505
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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