In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 5R ( 1997-05-01), p. 2617-
Abstract:
An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differential-resistance transistor (SDCNDRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect transistor (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR phenomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6.6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2617
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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