In:
Chinese Physics B, IOP Publishing, Vol. 27, No. 2 ( 2018-02-01), p. 028101-
Abstract:
In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In x Ga 1– x N/GaN multiple-quantumwell (MQW) laser diode (LD), the Al composition of inserted p-type Al x Ga 1– x N electron blocking layer (EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In0.04Ga0.96N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al x Ga 1– x N hole blocking layer (HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al x Ga 1– x N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al x Ga 1– x N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.
Type of Medium:
Online Resource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/27/2/028101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2018
detail.hit.zdb_id:
2412147-2
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