In:
Journal of Analytical Atomic Spectrometry, Royal Society of Chemistry (RSC), Vol. 38, No. 2 ( 2023), p. 267-275
Abstract:
Secondary ion mass spectrometry (SIMS) is applied to investigate chemical/elemental composition of samples revealed by the secondary ions escaping the surface while bombarding it with energetic primary ions. Usually, a region larger than the measurement is pre-sputtered to clean the surface, while reactive primary ions enhancing the secondary ion yield get implanted until a steady-state/equilibrium is reached. To avoid undesirable shadows and sample deformation at overlapping regions caused by multiple pre-sputtering/implantation we have developed an improved approach to pre-implant large field of interest homogeneously. This is done as a single action before starting the measurements. We have named it dynamic implantation. We present here two approaches for dynamic implantation: line implantation for measuring long transects and area implantation for large area mosaics. The homogeneously implanted region allows for analysis of a big field without generating artefacts. Broadly applicable preliminary calculations and guided step-by-step procedures are presented using the NanoSIMS Cameca Software as a model. Advantages and disadvantages of our method, and further recommendations for its application are highlighted.
Type of Medium:
Online Resource
ISSN:
0267-9477
,
1364-5544
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
1484654-8
detail.hit.zdb_id:
54176-X
SSG:
11
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