In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2050-
Abstract:
Low-energy plasma-enhanced chemical vapour deposition (LEPECVD) is shown to allow for the synthesis of relaxed graded Si 1- x Ge x , (0≤ x ≤1) buffer layers at deposition rates above 5 nm/s. On the basis of X-ray reciprocal space mapping, transmission electron microscopy, atomic force microscopy and defect etching, the quality of these buffer layers is shown to be comparable to similar structures grown by other techniques at much lower rates. LEPECVD and molecular beam epitaxy (MBE) have been combined for the synthesis of modulation-doped Si quantum wells, yielding mobilities up to 150000 cm 2 /Vs at 2 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2050
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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