In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 10R ( 1996-10-01), p. 5342-
Abstract:
With full utilization of the low-temperature process of hydrogenated amorphous silicon (a-Si) thin-film deposition and long carrier lifetime of high-purity crystalline silicon (c-Si) , we have developed a new type of a-Si/c-Si double heterojunction X-ray sensor. The sensor has the structure of Au/p a-SiC/n NTD c-Si/n a-Si/Al. High-purity NTD (neutron transmutation doping) crystalline silicon wafers were used as substrates. The high-purity NTD crystalline silicon has a long carrier lifetime (about 400 µs), and the low deposition temperature of a-Si has no adverse effects on the carrier lifetime. Therefore, high photogenerated carrier collection efficiency and high sensitivity can be obtained. The characteristics of this kind of X-ray sensor have been examined. The linearity of the relationship between output current and X-ray intensity was good, and the sensitivity was high.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.5342
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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