In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 19 ( 2013), p. 197202-
Abstract:
The thickness of an active layer is limited by its low mobility of carriers in a polymer solar cell composed of the blend bulk-heterojunction formed by P3HT as donor material and PCBM as acceptor material, which can affect the light absorption of the polymer solar cell. Metal nanocrystals-doped polymer active layer can enhance its inner electrical field and absorb light due to the surface plasmon resonance (SPR) effect of the nanocrystals. Two-dimensional electrical field distributions in the polymer solar cells are simulated based on finite difference time domain (FDTD) approach, under the assumption that the diameter of doping nano-Ag is 50 nm, the distance between two nanocrystals is 50nm and the incident light wavelength is 400 nm or 500 nm. The electrical field distributions over the cross-section of nano-Ag are also simulated at the incident light angle of 15°, 45°, 60°, respectively. The light absorption of different devices are calculated, in which the sizes of nano-Ag take 10 nm, 20 nm and 50 nm, respectively, Particles of nano-Ag are dispersed in PEDOT:PSS layer. Moreover, the light absorption is calculated at the incident light angles of 15°, 45°, 60°, respectively. Results show that the electrical field is redistributed due to the SPR effect caused by nano-Ag in the polymer active layer. A larger size of nano-Ag leads to light scattering in a wider angle, thus results in more light absorption by the device. Here, the colloid of nano-Ag is prepared from an organic salt of Ag, and the polymer solar cell with nano-Ag is fabricated in the structure of glass /ITO (～100 nm) /PEDOT:PSS (40 nm) /P3HT:PCBM (～100 nm)/(nano-Ag) /LiF (1 nm) /Al (120 nm). Furthermore, experimental results show that the nano-Ag doped in P3HT:PCBM layer increases light absorption and improves the electrical performance of the device, which enhances the incident photon conversion efficiency (IPCE) in spectrum at 520nm by 17.9%.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.62.197202
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2013
Bookmarklink
