In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 2A ( 1998-02-01), p. L115-
Abstract:
A new structure of an n-channel junction field-effect transistor (n-channel JFET) embedded in a pin diode for an X-ray detector is proposed. When a p/n junction, which is formed on the n - substrate (i. e., i layer) of the pin diode around the JFET, is reverse-biased, the depletion region is extended under the n channel of the JFET, because the donor density of the n - substrate is as low as 2 ×10 12 cm -3 . This indicates that the n channel can be electrically separated from the n - substrate, without a p region under the n channel. Since it is unnecessary to form the p region under the n channel, only one type of donor exists in the n channel of the JFET proposed here, suggesting that this n-channel JFET has the advantage of high performance due to high mobility and a low noise characteristic due to low defect densities.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L115
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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