In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 337 ( 1994)
Abstract:
The thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for thermal treatments at 500°C for l0h. Moreover, a noticeable accumulation of the refractory metal, ( Cr, Ti ), at the Cu / SiO2 interface has been observed. The diffusion phenomena allows the self-aligned formation of a refractory metal barrier layer at the SiO2 surface.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-337-225
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1994
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