In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 2A ( 1992-02-01), p. L63-
Abstract:
The simultaneous zone melting recrystallization of two stacked silicon layers is reported. Branching subgrain boundaries were revealed in the bottom film. Considerably more subtle, straight, parallel, non-branching defect trails were observed in the top layer. The present experiments prove that previous models that attribute this difference to the macroscopic in-plane thermal stress field cannot account for this large difference. The typical defect structure obtained in the top film is thought to be (directly) related to the radiative type of heating applied to this top layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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