In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1822-
Abstract:
Highly selective wet-etching of InGaAs on InAlAs was demonstrated using pH-controlled adipic acid, NH 4 OH, and H 2 O 2 solutions. A maximum selectivity of 250 was obtained by controlling the etching mechanism of InGaAs and InAlAs. This highly selective etching was applied to the fabrication of InAlAs/InGaAs high electron mobility transistors (HEMTs). The standard deviations of the threshold voltage ( V th ) and peak extrinsic transconductance ( g m ) were as low as 38 mV and 11 mS/mm, respectively, in a 3-inch diameter wafer. The average g m was as high as 726 mS/mm which is comparable to or higher than that of conventional InAlAs/InGaAs HEMTs fabricated by non-selective etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1822
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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