In:
npj Computational Materials, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2021-10-01)
Abstract:
Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi 2 N 4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.
Type of Medium:
Online Resource
ISSN:
2057-3960
DOI:
10.1038/s41524-021-00632-3
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2021
detail.hit.zdb_id:
2843287-3
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