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Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 1: Experimental Devices

Moselund, Kirsten Emilie ; Cutaia, Davide ; Schmid, Heinz ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2016

In: IEEE Transactions on Electron Devices Vol. 63, No. 11 ( 2016-11), p. 4233-4239

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In: IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Vol. 63, No. 11 ( 2016-11), p. 4233-4239

Type of Medium: Online Resource

ISSN: 0018-9383 , 1557-9646

URL: Article

DOI: 10.1109/TED.2016.2606762

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2016

detail.hit.zdb_id: 2028088-9

detail.hit.zdb_id: 241634-7

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The High-Mobility Bended n-Channel Silicon Nanowire Transistor

Moselund, Kirsten Emilie ; Najmzadeh, Mohammad ; Dobrosz, Peter ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2010

In: IEEE Transactions on Electron Devices Vol. 57, No. 4 ( 2010-04), p. 866-876

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In: IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Vol. 57, No. 4 ( 2010-04), p. 866-876

Type of Medium: Online Resource

ISSN: 0018-9383 , 1557-9646

URL: Article

DOI: 10.1109/TED.2010.2040939

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2010

detail.hit.zdb_id: 2028088-9

detail.hit.zdb_id: 241634-7

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InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding

Mauthe, Svenja ; Vico Trivino, Noelia ; Baumgartner, Yannick ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2019

In: IEEE Journal of Selected Topics in Quantum Electronics Vol. 25, No. 6 ( 2019-11), p. 1-7

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In: IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers (IEEE), Vol. 25, No. 6 ( 2019-11), p. 1-7

Type of Medium: Online Resource

ISSN: 1077-260X , 1558-4542

URL: Journal

URL: Article

DOI: 10.1109/JSTQE.2944

DOI: 10.1109/JSTQE.2019.2915924

RVK:

UA 1000

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2019

detail.hit.zdb_id: 2025385-0

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Corner Effect and Local Volume Inversion in SiNW FETs

De Michielis, Luca ; Moselund, Kirsten Emilie ; Selmi, Luca ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2011

In: IEEE Transactions on Nanotechnology Vol. 10, No. 4 ( 2011-7), p. 810-816

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In: IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE), Vol. 10, No. 4 ( 2011-7), p. 810-816

Type of Medium: Online Resource

ISSN: 1536-125X , 1941-0085

URL: Article

DOI: 10.1109/TNANO.2010.2080284

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2011

detail.hit.zdb_id: 2082654-0

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Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Rupakula, Maneesha ; Zhang, Junrui ; Bellando, Francesco ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2020

In: IEEE Journal of the Electron Devices Society Vol. 8 ( 2020), p. 773-779

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In: IEEE Journal of the Electron Devices Society, Institute of Electrical and Electronics Engineers (IEEE), Vol. 8 ( 2020), p. 773-779

Type of Medium: Online Resource

ISSN: 2168-6734

URL: Journal

URL: Article

DOI: 10.1109/JEDS.6245494

DOI: 10.1109/JEDS.2020.3008094

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2020

detail.hit.zdb_id: 2696552-5

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