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Manual for abdominal ultrasound in cancer screening and health checkups, revised edition (2021)

Okaniwa, Shinji ; Hirai, Toshiko ; Ogawa, Masahiro ; [et al.]

Springer Science and Business Media LLC ; 2023

In: Journal of Medical Ultrasonics Vol. 50, No. 1 ( 2023-01), p. 5-49

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In: Journal of Medical Ultrasonics, Springer Science and Business Media LLC, Vol. 50, No. 1 ( 2023-01), p. 5-49

Type of Medium: Online Resource

ISSN: 1346-4523 , 1613-2254

URL: Article

DOI: 10.1007/s10396-022-01272-w

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2023

detail.hit.zdb_id: 2139920-7

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Intensive or standard blood pressure control in patients with a history of ischemic stroke: RESPECT post hoc analysis

Kitagawa, Kazuo ; Arima, Hisatomi ; Yamamoto, Yasumasa ; [et al.]

Springer Science and Business Media LLC ; 2022

In: Hypertension Research Vol. 45, No. 4 ( 2022-04), p. 591-601

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In: Hypertension Research, Springer Science and Business Media LLC, Vol. 45, No. 4 ( 2022-04), p. 591-601

Type of Medium: Online Resource

ISSN: 0916-9636 , 1348-4214

URL: Article

DOI: 10.1038/s41440-022-00862-y

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2022

detail.hit.zdb_id: 2110941-2

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Influence of hospital capabilities and prehospital time on outcomes of thrombectomy for stroke in Japan from 2013 to 2016

Kurogi, Ai ; Onozuka, Daisuke ; Hagihara, Akihito ; [et al.]

Springer Science and Business Media LLC ; 2022

In: Scientific Reports Vol. 12, No. 1 ( 2022-02-28)

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In: Scientific Reports, Springer Science and Business Media LLC, Vol. 12, No. 1 ( 2022-02-28)

Abstract: To determine whether increasing thrombectomy-capable hospitals with moderate comprehensive stroke center (CSC) capabilities is a valid alternative to centralization of those with high CSC capabilities. This retrospective, nationwide, observational study used data from the J-ASPECT database linked to national emergency medical service (EMS) records, captured during 2013–2016. We compared the influence of mechanical thrombectomy (MT) use, the CSC score, and the total EMS response time on the modified Rankin Scale score at discharge among patients with acute ischemic stroke transported by ambulance, in phases I (2013–2014, 1461 patients) and II (2015–2016, 3259 patients). We used ordinal logistic regression analyses to analyze outcomes. From phase I to II, MTs increased from 2.7 to 5.5%, and full-time endovascular physicians per hospital decreased. The CSC score and EMS response time remained unchanged. In phase I, higher CSC scores were associated with better outcomes (1-point increase, odds ratio [95% confidence interval]: 0.951 [0.915–0.989] ) and longer EMS response time was associated with worse outcomes (1-min increase, 1.007 [1.001–1.013]). In phase II, neither influenced the outcomes. During the transitional shortage of thrombectomy-capable hospitals, increasing hospitals with moderate CSC scores may increase nationwide access to MT, improving outcomes.

Type of Medium: Online Resource

ISSN: 2045-2322

URL: Article

DOI: 10.1038/s41598-022-06074-1

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2022

detail.hit.zdb_id: 2615211-3

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Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition

Tani, Kouichi ; Tetsuo Yamaji, Tetsuo Yamaji ; Satoshi Nishikawa, Satoshi Nishikawa

IOP Publishing ; 1992

In: Japanese Journal of Applied Physics Vol. 31, No. 12S ( 1992-12-01), p. 4407-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12S ( 1992-12-01), p. 4407-

Abstract: The effects of contact-hole-etching damage on aluminum (Al) chemical vapor deposition (CVD) have been investigated. When Si wafers were etched by reactive ion etching (RIE) under the conditions of contact hole etching, two kinds of damage were observed on the etched surface; i.e., an amorphized layer at a depth of 30 Å and a contaminated (carbon, oxygen, and fluorine) layer at a depth of 100 Å. Aluminum deposited on the as-etched wafer had granular structure and the grains were not connected with each other, which indicates that the growth of Al is suppressed by the damages. The effect of these damages was be removed by annealing at 1050°C or etching at a depth of 30 Å (slight etching). In both cases, the amorphized layer was disappeared by recrystallization or was removed by etching, but the contaminated layer still remained. Therefore, it is concluded that the nucleation of Al is suppressed by the amorphized layer, but not by the contaminated layer. When this slight etching is made after contact hole etching, perfect contact hole filling with Al can be achieved by selective CVD.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.31.4407

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1992

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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Modeling of Mechanism of Leakage in a Shallow p + /n Junction Formed by Preamorphization

Tanaka, Akira ; Tetsuo Yamaji, Tetsuo Yamaji ; Satoshi Nishikawa, Satoshi Nishikawa

IOP Publishing ; 1991

In: Japanese Journal of Applied Physics Vol. 30, No. 5A ( 1991-05-01), p. L775-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 5A ( 1991-05-01), p. L775-

Abstract: A model of the leakage induced by preamorphization is developed, assuming that the depth profile of excess interstitials making up dislocation loops is equal to the profile before annealing and that it is approximated by Gaussian distribution. It has been confirmed that this model well reproduces experimental data. Furthermore, Ge + preamorphization was compared with Si + in detail. An advantage of Ge + preamorphization over Si + has been confirmed in a wider range of conditions than in our previous report. A 0.08-µm-deep p + /n junction whose leakage current is less than 1×10 -8 A/cm 2 is fabricated with a 40-nm-thick amorphous layer formed by Ge + implantation.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.30.L775

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1991

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing

Kouichi Tani, Kouichi Tani ; Satoshi Nishikawa, Satoshi Nishikawa

IOP Publishing ; 1994

In: Japanese Journal of Applied Physics Vol. 33, No. 1S ( 1994-01-01), p. 455-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 455-

Abstract: The interaction between Al deposited selectively by chemical vapor deposition (CVD) and Si has been investigated. The structure of Al depended on the size of contact holes. Single-crystalline Al was formed in 0.7 µm contact holes, but polycrystalline Al in 1.2 µm and 2.0 µm holes. In the case of single-crystalline Al, Si at the bottom of contact holes was eroded uniformly by Al after deposition and after annealing at 400° C. In the case of polycrystalline Al, Si was eroded non uniformly and Al spikes were formed. However, after annealing at 400° C, Al spikes disappeared and the surface of eroded Si became extremely flat. Junction leakage current of the 2.0 µm n + contact was found to increase after Al deposition. However, after annealing at 400° C, increase of junction leakage current was not found to 10 V. This change may be due to the improvement of the interface. These results indicate that selective Al-CVD can be used as a contact-hole-filling method.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.33.455

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1994

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection

Hideaki Matsuhashi, Hideaki Matsuhashi ; Satoshi Nishikawa, Satoshi Nishikawa

IOP Publishing ; 1993

In: Japanese Journal of Applied Physics Vol. 32, No. 1S ( 1993-01-01), p. 362-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 362-

Abstract: The effect of gate materials on hot-carrier degradation, especially on the generation of the interface state, is investigated. The generation of the interface state in n-channel metal-oxide-semiconductor field-effect transistors (NMOSFET's) by drain avalanche hot-carrier (DAHC) injection is independent of the gate material. On the other hand, the generation of the interface state in p-channel MOSFET's (PMOSFET's) by DAHC injection is greatly dependent on the gate material but almost independent of the channel doping profile, in other words, a surface- or buried-channel device. The increase in interface state density (Δ D it ) in tungsten (W)-gate PMOSFET's is much larger than that of polycide-gate devices. In order to verify the effect of carrier species injected into SiO 2 , electrons were injected from the substrate into the gate electrode by two methods: Fowler-Nordheim injection and hot-electron injection from the forward biased p-n junction injector. The large Δ D it in W-gate devices is observed in both methods. It is confirmed that the large Δ D it in W-gate PMOSFET's stressed by DAHC injection is caused by the injection of electrons into SiO 2 . These phenomena are considered to occur due to the difference of hole injection from the gate into SiO 2 , excited at the gate by electron injection, between gate materials.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.32.362

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1993

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters

Shuji Ito, Shuji Ito ; Satoshi Nishikawa, Satoshi Nishikawa

IOP Publishing ; 1996

In: Japanese Journal of Applied Physics Vol. 35, No. 2S ( 1996-02-01), p. 1060-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1060-

Abstract: The impact of phosphorus implants into polysilicon emitters on boron diffusion in the underlying single-crystal base region of SiGe heterojunction bipolar transistors has been investigated. Anomalously enhanced boron diffusion, which is believed to be induced by implant-induced excess interstitials diffusing into the single-crystal region through the polysilicon emitter, is observed after annealing. In situ phosphorus-doped polysilicon is shown to be very effective in suppressing the diffusion enhancement and in realizing a very sharp boron profile.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.35.1060

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1996

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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Integrative Annotation of 21,037 Human Genes Validated by Full-Length cDNA Clones

Imanishi, Tadashi ; Itoh, Takeshi ; Suzuki, Yutaka ; [et al.]

Public Library of Science (PLoS) ; 2004

In: PLoS Biology Vol. 2, No. 6 ( 2004-4-20), p. e162-

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In: PLoS Biology, Public Library of Science (PLoS), Vol. 2, No. 6 ( 2004-4-20), p. e162-

Type of Medium: Online Resource

ISSN: 1545-7885

URL: Article

DOI: 10.1371/journal.pbio.0020162

DOI: 10.1371/journal.pbio.0020162.g001

DOI: 10.1371/journal.pbio.0020162.g002

DOI: 10.1371/journal.pbio.0020162.g003

DOI: 10.1371/journal.pbio.0020162.g004

DOI: 10.1371/journal.pbio.0020162.g005

DOI: 10.1371/journal.pbio.0020162.g006

DOI: 10.1371/journal.pbio.0020162.g007

DOI: 10.1371/journal.pbio.0020162.t001

DOI: 10.1371/journal.pbio.0020162.t002

DOI: 10.1371/journal.pbio.0020162.t003

DOI: 10.1371/journal.pbio.0020162.t004

DOI: 10.1371/journal.pbio.0020162.t005

DOI: 10.1371/journal.pbio.0020162.t006

DOI: 10.1371/journal.pbio.0020162.sd001

DOI: 10.1371/journal.pbio.0020162.sd002

DOI: 10.1371/journal.pbio.0020162.sd003

DOI: 10.1371/journal.pbio.0020162.sg001

DOI: 10.1371/journal.pbio.0020162.sg002

DOI: 10.1371/journal.pbio.0020162.sg003

DOI: 10.1371/journal.pbio.0020162.sg004

DOI: 10.1371/journal.pbio.0020162.sg005

DOI: 10.1371/journal.pbio.0020162.sg006

DOI: 10.1371/journal.pbio.0020162.sg007

DOI: 10.1371/journal.pbio.0020162.sg008

DOI: 10.1371/journal.pbio.0020162.sg009

DOI: 10.1371/journal.pbio.0020162.st001

DOI: 10.1371/journal.pbio.0020162.st002

DOI: 10.1371/journal.pbio.0020162.st003

DOI: 10.1371/journal.pbio.0020162.st004

DOI: 10.1371/journal.pbio.0020162.st005

DOI: 10.1371/journal.pbio.0020162.st006

DOI: 10.1371/journal.pbio.0020162.st007

DOI: 10.1371/journal.pbio.0020162.st008

DOI: 10.1371/journal.pbio.0020162.st009

DOI: 10.1371/journal.pbio.0020162.st010

DOI: 10.1371/journal.pbio.0020162.sd004

Language: English

Publisher: Public Library of Science (PLoS)

Publication Date: 2004

detail.hit.zdb_id: 2126773-X

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Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure

Igarashi, Yasushi ; Yamanobe, Tomomi ; Yamaji, Tetsuo ; [et al.]

IOP Publishing ; 1994

In: Japanese Journal of Applied Physics Vol. 33, No. 1S ( 1994-01-01), p. 462-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 462-

Abstract: The etching process for a Cu interconnect with self-aligned deposition of a thick sidewall film has been developed. This sidewall film acts as a barrier layer to prevent Cu from corrosion and oxidation during the subsequent process, such as formation of a passivation film. Using this etching process, the Cu interconnect of a TiN/Cu/TiN multilayered structure in a submicron feature is formed. Resistivity for the Cu interconnects is about 2 µ Ω ·cm, and it does not change on annealing up to 700° C. Diffusion of impurities into Cu is not observed up to 800° C annealing. Therefore, the structure of the Cu interconnect, that is, Cu covered with TiN and the thick sidewall film, is suitable for the ULSI process.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.33.462

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing

Publication Date: 1994

detail.hit.zdb_id: 218223-3

detail.hit.zdb_id: 797294-5

detail.hit.zdb_id: 2006801-3

detail.hit.zdb_id: 797295-7

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