In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 8S ( 1995-08-01), p. 4429-
Abstract:
Based on a proposed growth model of Si selective epitaxy on Al 2 O 3 , the selective epitaxy of Si on both Al 2 O 3 and SiO 2 /Si substrates was investigated. It is clarified that the incubation time for the Si growth on Al 2 O 3 depends on electron dose density and growth conditions. The incubation time increased with increasing electron dose density from 10 15 to 10 18 electrons/cm 2 . Thickness of the selectively grown layer is determined by taking the product of the growth rate and the incubation time difference. Selective Si deposition on SiO 2 /Si substrates was studied using an electron-beam irradiation method, because SiO 2 is also the oxide material as Al 2 O 3 , and the same phenomena could be expected from our proposed mechanism. It was confirmed that the selective growth of Si was possible on the SiO 2 /Si substrate modified by electron beam irradiation. However, Si deposition on SiO 2 occurred on the irradiated area, in contrast to the case of Si on Al 2 O 3 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.4429
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink