In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 7R ( 2005-07-01), p. 4770-
Abstract:
Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO 2 /Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO 2 /Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1:1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.4770
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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