In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 600-603 ( 2008-9), p. 1079-1082
Abstract:
This paper reports on the fabrication and testing of 6H-SiC junction field effect transistors
(JFETs) and a simple differential amplifier integrated circuit that have demonstrated 2000 hours of electrical operation at 500 °C without degradation. The high-temperature ohmic contacts, dielectric
passivation, and packaging technology that enabled such 500 °C durability are briefly described. Key JFET parameters of threshold voltage, on-state resistance, transconductance, and on-state current, as
well as the gain of the differential amplifier integrated circuit, exhibited less than 7% change over the first 2000 hours of 500 °C operational testing.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.600-603
DOI:
10.4028/www.scientific.net/MSF.600-603.1079
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2008
detail.hit.zdb_id:
2047372-2
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