In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 5R ( 1994-05-01), p. 2741-
Abstract:
The junction characteristics of metal/organic (M/Org) and organic/organic (Org/Org) interfaces, composing an organic electroluminescent (EL) device, M/Alq3/Diamine/ITO, were studied by measuring the displacement current characteristics of M/Org/Org/ SiO 2 /Si structures. The M/Alq3 junction was found to be both electron and hole injective, depending on the metal electrode. As for the Alq3/Diamine interface, it was found that two band offsets (Φ VB and Φ CB ) existed for respective valence and conduction bands. Φ VB was not very large, and holes in Diamine were able to pass through into the adjacent Alq3 layer by applying a forward-bias, but Φ CB was so large that the electrons in Alq3 were blocked. Based on the standpoint that characteristics of the organic thin-film devices are governed by those junctions, we discussed carrier-injection mechanism, and explain the efficient EL emission.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2741
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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