In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6S ( 1997-06-01), p. 3814-
Abstract:
We have found STM tip-induced 2 ×2–In → √3×√3–In and √3×√3–In → 2 ×2–In structural transformations on a Si(111) surface at room temperature, relatively low bias voltages and large tip-sample separations. The processes were found to be reversible depending on the tip bias voltage polarity. Our results can be explained by STM tip-induced diffusion of In atoms on the √3×√3–In and 2 ×2–In surfaces.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.3814
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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