In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 11R ( 1999-11-01), p. 6470-
Abstract:
F atoms were generated by a low-power microwave discharge of various Ar/CF 4 mixtures in a fast discharge flow. They were used for chemical dry etching of Si substrate at room temperature. The variation of etch rate was measured as a function of the microwave power, the Ar or CF 4 flow rate, and the distance between the center of discharge and the substrate, in order to determine the optimum conditions. The maximum etch rate was about 700 Å/min at a microwave power of 80 W, an Ar flow rate of 3000 sccm, a CF 4 flow rate of 70 sccm, and a distance between the center of discharge and the substrate of 10 cm. A thin C m F n polymer was deposited on the etching edge at high CF 4 flow rates of 80–100 sccm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.6470
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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