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1

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Influence of epitaxy on the low temperature silicon diffusion through gold layers

Cros, A. ; Dallaporta, H. ; Oberlin, J.C.

Elsevier BV ; 1992

In: Applied Surface Science Vol. 56-58 ( 1992-1), p. 434-437

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In: Applied Surface Science, Elsevier BV, Vol. 56-58 ( 1992-1), p. 434-437

Type of Medium: Online Resource

ISSN: 0169-4332

URL: Article

DOI: 10.1016/0169-4332(92)90266-Z

Language: English

Publisher: Elsevier BV

Publication Date: 1992

detail.hit.zdb_id: 2002520-8

detail.hit.zdb_id: 52886-9

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2

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Influence of H on the recrystallization of amorphous Si layers

Oberlin, J.C. ; Ligeon, E. ; Prunier, C. ; [et al.]

Elsevier BV ; 1987

In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 19-20 ( 1987-1), p. 462-465

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In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier BV, Vol. 19-20 ( 1987-1), p. 462-465

Type of Medium: Online Resource

ISSN: 0168-583X

URL: Article

DOI: 10.1016/S0168-583X(87)80091-5

Language: English

Publisher: Elsevier BV

Publication Date: 1987

detail.hit.zdb_id: 1466524-4

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3

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Foil non-uniformity correction in straggling measurements by the backscattering technique

Stoquert, J.P. ; Oberlin, J.C. ; Heitz, C. ; [et al.]

Elsevier BV ; 1981

In: Nuclear Instruments and Methods in Physics Research Vol. 188, No. 1 ( 1981-9), p. 249-251

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In: Nuclear Instruments and Methods in Physics Research, Elsevier BV, Vol. 188, No. 1 ( 1981-9), p. 249-251

Type of Medium: Online Resource

ISSN: 0167-5087

URL: Article

DOI: 10.1016/0029-554X(81)90348-7

RVK:

UA 5680.A

Language: English

Publisher: Elsevier BV

Publication Date: 1981

detail.hit.zdb_id: 2205648-8

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4

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Refractory Metal Encapsulation in Copper Wiring

Palleau, J. ; Oberlin, J.C. ; Braud, F. ; [et al.]

Springer Science and Business Media LLC ; 1994

In: MRS Proceedings Vol. 337 ( 1994)

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In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 337 ( 1994)

Abstract: The thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for thermal treatments at 500°C for l0h. Moreover, a noticeable accumulation of the refractory metal, ( Cr, Ti ), at the Cu / SiO2 interface has been observed. The diffusion phenomena allows the self-aligned formation of a refractory metal barrier layer at the SiO2 surface.

Type of Medium: Online Resource

ISSN: 0272-9172 , 1946-4274

URL: Article

DOI: 10.1557/PROC-337-225

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 1994

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5

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Strasbourg MP-10, status report

Oberlin, J.C. ; Heng, G. ; Letournel, M.

Elsevier BV ; 1986

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 244, No. 1-2 ( 1986-2), p. 35-38

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In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier BV, Vol. 244, No. 1-2 ( 1986-2), p. 35-38

Type of Medium: Online Resource

ISSN: 0168-9002

URL: Article

DOI: 10.1016/0168-9002(86)90733-3

RVK:

UA 5680.A

Language: English

Publisher: Elsevier BV

Publication Date: 1986

detail.hit.zdb_id: 1466532-3

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6

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Microtexture and structure of semi-cokes and cokes

Bourrat, X. ; Oberlin, A. ; Escalier, J.C.

Elsevier BV ; 1986

In: Fuel Vol. 65, No. 11 ( 1986-11), p. 1490-1500

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In: Fuel, Elsevier BV, Vol. 65, No. 11 ( 1986-11), p. 1490-1500

Type of Medium: Online Resource

ISSN: 0016-2361

URL: Article

DOI: 10.1016/0016-2361(86)90323-6

Language: English

Publisher: Elsevier BV

Publication Date: 1986

detail.hit.zdb_id: 1483656-7

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7

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The role of self diffusion in the dry development and plasma durability of polymers

Paniez, P.J. ; Joubert, O.P. ; Pons, M.J. ; [et al.]

Elsevier BV ; 1991

In: Microelectronic Engineering Vol. 13, No. 1-4 ( 1991-3), p. 57-60

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In: Microelectronic Engineering, Elsevier BV, Vol. 13, No. 1-4 ( 1991-3), p. 57-60

Type of Medium: Online Resource

ISSN: 0167-9317

URL: Article

DOI: 10.1016/0167-9317(91)90047-H

Language: English

Publisher: Elsevier BV

Publication Date: 1991

detail.hit.zdb_id: 1497065-X

detail.hit.zdb_id: 605230-7

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8

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Dependence of energy straggling on energy loss as a first order correction

Stoquert, J.P. ; Amokrane, A. ; Beaumevieille, H. ; [et al.]

Elsevier BV ; 1981

In: Nuclear Instruments and Methods in Physics Research Vol. 185, No. 1-3 ( 1981-6), p. 513-516

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In: Nuclear Instruments and Methods in Physics Research, Elsevier BV, Vol. 185, No. 1-3 ( 1981-6), p. 513-516

Type of Medium: Online Resource

ISSN: 0167-5087

URL: Article

DOI: 10.1016/0029-554X(81)91249-0

RVK:

UA 5680.A

Language: English

Publisher: Elsevier BV

Publication Date: 1981

detail.hit.zdb_id: 2205648-8

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9

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Towards development of a salicide WSi2 process using RTA

Bakli, M. ; Göltz, G. ; Vernet, M. ; [et al.]

Elsevier BV ; 1989

In: Applied Surface Science Vol. 38, No. 1-4 ( 1989-9), p. 441-446

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In: Applied Surface Science, Elsevier BV, Vol. 38, No. 1-4 ( 1989-9), p. 441-446

Type of Medium: Online Resource

ISSN: 0169-4332

URL: Article

DOI: 10.1016/0169-4332(89)90565-5

Language: English

Publisher: Elsevier BV

Publication Date: 1989

detail.hit.zdb_id: 2002520-8

detail.hit.zdb_id: 52886-9

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10

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Defects created by self-implantation in Si as a function of temperature and fluence

Prunier, C. ; Ligeon, E. ; Bourret, A. ; [et al.]

Elsevier BV ; 1986

In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 17, No. 3 ( 1986-10), p. 227-233

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In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier BV, Vol. 17, No. 3 ( 1986-10), p. 227-233

Type of Medium: Online Resource

ISSN: 0168-583X

URL: Article

DOI: 10.1016/0168-583X(86)90061-3

Language: English

Publisher: Elsevier BV

Publication Date: 1986

detail.hit.zdb_id: 1466524-4

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