In:
Journal of Applied Physics, AIP Publishing, Vol. 105, No. 1 ( 2009-01-01)
Abstract:
In this paper we present results from quantitative sputter yield measurements for bombardment with 30 keV Ga+ ions, which are commonly used in focused ion beam systems. The sputter yields were obtained from measurements of the removed volume. We describe a technique that allows the precise geometric measurement of the material removed by multipass milling. Yield data for polycrystalline Permalloy and cobalt are measured as well as data for silicon and gallium arsenide. For iron and tungsten single crystals, the dependence of the sputter yield on the crystalline orientation has been investigated. Distinctive minima and maxima of the yield are observed as a function of the incidence angle, and vary up to a factor of 10. The positions of the minima coincide with low-Miller-index crystalline orientations and can thus be attributed to channeling of the Ga+ ions. A comparison with simulation results for amorphous materials shows that yield values from simulation are only applicable for those orientations without channeling.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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