In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 29, No. 3 ( 2011-05-01)
Abstract:
Thin film transistors (TFTs) were fabricated with a zinc oxide (ZnO) channel deposited by ultralow-pressure sputtering (ULPS) at a pressure less than 1.3×10−3 Pa. The field-effect mobility (μFE) and the subthreshold gate swing (SS) of the ULPS-ZnO TFTs were dramatically improved up to 8.5 cm2/V s and 0.31 V/decade, respectively, compared to 1.6 cm2/V s and 1.31 V/decade for the ZnO TFTs fabricated by a conventional sputtering pressure (CSP) of 6.7×10−1 Pa. The improved characteristics of the ULPS-ZnO TFTs compared to the CSP-ZnO one can be attributed to the greater densification of the ZnO semiconductor film at the lower deposition pressure.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2011
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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