In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6R ( 1997-06-01), p. 3433-
Abstract:
Experimental verifications are presented for the injection enhanced gate effects of a new metal oxide semiconductor (MOS) controlled power transistor. We call this transistor an “injection enhanced gate transistor” (IEGT). It was first experimentally confirmed that IEGTs achieve the same low on-state voltage drop as that of gate turn-off (GTO) thyristors without degradation of turn-off capability. The fabricated 4.5 kV IEGT with 8 µ m deep trench gates exhibited an on-state voltage of 2.5 V at 100 A/cm 2 , and the measured on-state voltage drop as a function of the trench gate structural parameter agrees well with the predicted values. By use of the fabricated IEGT, 4.2 kV self-clamped anode voltage switching operation was achieved at a turn-off current density of 65 A/cm 2 . The observed electrical characteristics of the fabricated IEGTs agree well with the predicted characteristics, and it was confirmed that high voltage and high power can be directly controlled by a MOS gate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.3433
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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