In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 7R ( 1991-07-01), p. 1354-
Abstract:
As a new amorphous-silicon (a-Si) fabrication technique, an ion-gun chemical vapor deposition (CVD) method, in which ions add energy to surface reactions, has been developed. The ion source employed in this gun is of the hot cathode type with a multicapillary anode which creates a collimated gas flow. A-Si:H and a-Ge:H films, fabricated at the substrate temperature of 130°C, show low dihydride bond density and high photosensitivity (4.0×10 5 at E opt ∼1.95 eV and 5.1 at E opt ∼1.03 eV, respectively). In addition, a double ion-gun CVD method, for which the energy of two kinds of ion species can be independently controlled, has been developed for fabricating high-quality a-Si-alloy films. Highly photoconductive a-SiGe:H films with low optical gaps ( 〈 1.3 eV) were obtained using this fabrication method.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.1354
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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