In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 9R ( 1996-09-01), p. 4606-
Abstract:
A comparative examination is presented between two series of As + implanted junctions into (100) Si substrates with varying Boron concentration N s . The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as N s increases. It is found that the increase in N t , the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of E t , the trapping centers energy level with respect to E i , the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, ∣ E t - E i ∣ decreases with increasing N s in the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6×10 14 cm -3 substrates, outstandingly exhibit comparable performance in both annealing temperatures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.4606
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink