In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4A ( 2000-04-01), p. L300-
Abstract:
The 2075°C melting temperature of boron has hindered the growth of hexagonal boron nitride (h-BN) crystal. The use of Si flux was reported to decrease the growth temperature to 1850°C. In this work, we discovered Na as a new flux for the growth of h-BN crystals at a temperature as low as 700°C. The growth of h-BN detected by X-ray diffraction (XRD) was consistent with the hexagonal features observed by scanning electron microscopy (SEM). Absorption at ∼1372 cm -1 was indicated by Fourier transform infrared (FTIR) spectroscopy. This absorption was attributed to the in-plane B-N stretching mode of h-BN. Emissions at photon energies as high as ∼5.6 eV are observed from cathodoluminescence (CL) spectra, indicating an optical band gap of at least 5.6 eV.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L300
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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