In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4S ( 1994-04-01), p. 2258-
Abstract:
Polysiloxene-based thin films have been grown by the glow discharge of an Si 2 H 6 +O 2 gas mixture at a substrate temperature of -110° C. Infrared absorption spectra have shown that the matrix is mainly composed of (–SiH 2 O–) n chains which are terminated with SiH 3 and partly have Si–Si branches. The bonded hydrogen in the network is effused by ArF excimer laser irradiation, resulting in three-dimensional SiO 2 network formation. The nonirradiated region is easily etched off by a 0.16% HF solution, while the etch rate of the irradiated region is extremely lowered. The fine SiO 2 pattern is generated by the excimer laser irradiation through a metal stencil mask and subsequent etching of the nonirradiated region.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2258
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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