In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 717-720 ( 2012-5), p. 121-124
Abstract:
In-grown stacking faults (IGSFs) were studied in 4H-SiC homoepitaxial growth from a SiH 2 Cl 2 -C 3 H 8 -H 2 system. Most of the IGSFs, start from the epilayer/substrate interface, and exhibit photoluminescence emission peak at 2.58 eV (480 nm) indicating of 8H polytype. The growth parameters, including growth temperature, growth pressure, growth rate, hydrogen etching, et al., varied around the regular growth condition do not show a significant effect on the IGSF generation. Reactor furniture is identified to be a major reason of IGSF formation, especially when the insulation part of the furnace is not completely isolated from the growth zone. Dusting of insulation material is crucial in the formation of IGSFs. When using graphite felt as the insulation material, the IGSF density in the epilayer can be as high at ~10 4 cm -2 . Improvement of the insulation material by using graphite foil reduces the density to 30-100 cm -2 . Further reduction of IGSF density to less than 10 cm -2 is achieved by mild pretreatment of the substrate in molten KOH-NaOH eutectic.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.717-720
DOI:
10.4028/www.scientific.net/MSF.717-720.121
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2012
detail.hit.zdb_id:
2047372-2
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