In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 3A ( 1996-03-01), p. L304-
Abstract:
We describe abnormal dependences of threshold voltage ( V TH ) on gate length in 8-nm-thick silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) devices on separation by implanted oxygen (SIMOX) substrates. It is shown experimentally that as the gate length decreases, V TH increases at 30 K. It is assumed that the parasitic resistances of the source and drain regions induce an effective negative substrate bias, and this model is used to formulate the V TH equation. It is strongly indicated that the freeze-out effect of the parasitic resistance contributes to the clear appearance of the V TH roll-up behavior by means of the effective negative substrate bias at temperatures less than 100 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L304
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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