In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 9B ( 1994-09-01), p. L1338-
Abstract:
A scanning tunneling microscope (STM) operated under ultrahigh vacuum enabled us to eliminate individual formate anions ( DCOO - ) adsorbed on a TiO 2 (110) surface. When bias voltages of +3.7 V or more were applied on the sample, the formate anions were removed under the STM tip. In contrast, much higher voltages, +5.0 V or more, were required to damage the underlying TiO 2 surface. Thus we could strip off the formate anions in a desired area without damage to the substrate, to create patchworks of uncovered substrate in the monolayer of adsorbed formate anions. The threshold bias voltage for the elimination showed a small dependence on tunneling current, suggesting that the removal process is through field evaporation rather than direct excitation or thermal activation by tunneling electrons.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1338
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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