In:
Journal of Applied Physics, AIP Publishing, Vol. 105, No. 12 ( 2009-06-15)
Abstract:
We measured lateral ac transport (up to 20 MHz), thermopower, as well as resistivity and Hall effect in InN:Mg samples with various Mg content. The sign of the Hall effect for all the samples was negative (electrons), however, the thermopower (α) measurements have shown the p-type sign of α for moderate Mg content—in the window centered around 1×1019 cm−3. Further overdoping with Mg yields donor type of defects and the change of thermoelectric power sign. The ac measurements performed as a function of frequency revealed that in both samples exhibiting and nonexhibiting p-type sign of thermopower, the n-type inversion layer at the surface does not prevent the electric contact to the bulk layer. Therefore we conclude that the n-type Hall effect invariably reported for all the Mg-doped samples originates from electron domination in mobility-weighted contributions of both types of carriers.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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