In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 14 ( 2004-10-04), p. 2797-2799
Abstract:
Thermal stability, optical reflectivity, and contact resistivity of Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN were investigated. In contrast to its Pd∕Al∕Ti∕Au counterparts, Pd∕Ni∕Al∕Ti∕Au contacts retained their specific contact resistivity ( & lt;2×10−2Ωcm2) and reflectivity ( & gt;76%) after long-term annealing at 150 °C in nitrogen ambient. According to the results of the secondary ion mass spectroscopy study, it is suggested that the Ni layer prevents the penetration of Ti into GaN during thermal treatment.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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