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1

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Direct and full-scale experimental verifications towards ground–satellite quantum key distribution

Wang, Jian-Yu ; Yang, Bin ; Liao, Sheng-Kai ; [et al.]

Springer Science and Business Media LLC ; 2013

In: Nature Photonics Vol. 7, No. 5 ( 2013-5), p. 387-393

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In: Nature Photonics, Springer Science and Business Media LLC, Vol. 7, No. 5 ( 2013-5), p. 387-393

Type of Medium: Online Resource

ISSN: 1749-4885 , 1749-4893

URL: Article

DOI: 10.1038/nphoton.2013.89

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2013

detail.hit.zdb_id: 2264673-5

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2

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Effect of early dexamethasone on outcomes of COVID-19: A quasi-experimental study using propensity score matching

Liu, Wang-Da ; Wang, Jann-Tay ; Shih, Ming-Chieh ; [et al.]

Elsevier BV ; 2024

In: Journal of Microbiology, Immunology and Infection ( 2024-2)

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In: Journal of Microbiology, Immunology and Infection, Elsevier BV, ( 2024-2)

Type of Medium: Online Resource

ISSN: 1684-1182

URL: Article

DOI: 10.1016/j.jmii.2024.02.002

Language: English

Publisher: Elsevier BV

Publication Date: 2024

detail.hit.zdb_id: 2175858-X

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3

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An integrated space-to-ground quantum communication network over 4,600 kilometres

Chen, Yu-Ao ; Zhang, Qiang ; Chen, Teng-Yun ; [et al.]

Springer Science and Business Media LLC ; 2021

In: Nature Vol. 589, No. 7841 ( 2021-01-14), p. 214-219

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In: Nature, Springer Science and Business Media LLC, Vol. 589, No. 7841 ( 2021-01-14), p. 214-219

Type of Medium: Online Resource

ISSN: 0028-0836 , 1476-4687

URL: Article

DOI: 10.1038/s41586-020-03093-8

RVK:

TA 1000

RVK:

UA 1000

RVK:

WA 15000

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2021

detail.hit.zdb_id: 120714-3

detail.hit.zdb_id: 1413423-8

SSG: 11

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4

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Weaning from mechanical ventilation in intensive care units across 50 countries (WEAN SAFE): a multicentre, prospective, observational cohort study

Pham, Tài ; Heunks, Leo ; Bellani, Giacomo ; [et al.]

Elsevier BV ; 2023

In: The Lancet Respiratory Medicine Vol. 11, No. 5 ( 2023-05), p. 465-476

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In: The Lancet Respiratory Medicine, Elsevier BV, Vol. 11, No. 5 ( 2023-05), p. 465-476

Type of Medium: Online Resource

ISSN: 2213-2600

URL: Article

DOI: 10.1016/S2213-2600(22)00449-0

Language: English

Publisher: Elsevier BV

Publication Date: 2023

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5

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High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Zhang, Rui ; Chang, Kuan-Chang ; Chang, Ting-Chang ; [et al.]

Springer Science and Business Media LLC ; 2013

In: Nanoscale Research Letters Vol. 8, No. 1 ( 2013-12)

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In: Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 8, No. 1 ( 2013-12)

Abstract: In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.

Type of Medium: Online Resource

ISSN: 1556-276X

URL: Article

DOI: 10.1186/1556-276X-8-497

Language: English

Publisher: Springer Science and Business Media LLC

Publication Date: 2013

detail.hit.zdb_id: 2253244-4

detail.hit.zdb_id: 3149496-1

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6

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Human Hyperekplexic Mutations in Glycine Receptors Disinhibit the Brainstem by Hijacking GABAA Receptors

Zou, Guichang ; Chen, Qi ; Chen, Kai ; [et al.]

Elsevier BV ; 2019

In: iScience Vol. 19 ( 2019-09), p. 634-646

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In: iScience, Elsevier BV, Vol. 19 ( 2019-09), p. 634-646

Type of Medium: Online Resource

ISSN: 2589-0042

URL: Article

DOI: 10.1016/j.isci.2019.08.018

Language: English

Publisher: Elsevier BV

Publication Date: 2019

detail.hit.zdb_id: 2927064-9

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7

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Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Chang, Kuan-Chang ; Tsai, Tsung-Ming ; Chang, Ting-Chang ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2013

In: IEEE Electron Device Letters Vol. 34, No. 4 ( 2013-04), p. 511-513

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In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 34, No. 4 ( 2013-04), p. 511-513

Type of Medium: Online Resource

ISSN: 0741-3106 , 1558-0563

URL: Article

DOI: 10.1109/LED.2013.2248075

RVK:

ZG 1100

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2013

detail.hit.zdb_id: 245158-X

detail.hit.zdb_id: 2034325-5

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8

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Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

Chu, Tian-Jian ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2013

In: IEEE Electron Device Letters Vol. 34, No. 4 ( 2013-04), p. 502-504

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In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 34, No. 4 ( 2013-04), p. 502-504

Type of Medium: Online Resource

ISSN: 0741-3106 , 1558-0563

URL: Article

DOI: 10.1109/LED.2013.2242843

RVK:

ZG 1100

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2013

detail.hit.zdb_id: 245158-X

detail.hit.zdb_id: 2034325-5

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9

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Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Zhang, Rui ; Tsai, Tsung-Ming ; Chang, Ting-Chang ; [et al.]

AIP Publishing ; 2013

In: Journal of Applied Physics Vol. 114, No. 23 ( 2013-12-21)

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In: Journal of Applied Physics, AIP Publishing, Vol. 114, No. 23 ( 2013-12-21)

Abstract: In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

Type of Medium: Online Resource

ISSN: 0021-8979 , 1089-7550

URL: Article

DOI: 10.1063/1.4843695

Language: English

Publisher: AIP Publishing

Publication Date: 2013

detail.hit.zdb_id: 220641-9

detail.hit.zdb_id: 3112-4

detail.hit.zdb_id: 1476463-5

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10

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Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Tsai, Tsung-Ming ; Chang, Kuan-Chang ; Chang, Ting-Chang ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 2016

In: IEEE Electron Device Letters Vol. 37, No. 4 ( 2016-4), p. 408-411

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In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 37, No. 4 ( 2016-4), p. 408-411

Type of Medium: Online Resource

ISSN: 0741-3106 , 1558-0563

URL: Article

DOI: 10.1109/LED.2016.2532883

RVK:

ZG 1100

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 2016

detail.hit.zdb_id: 245158-X

detail.hit.zdb_id: 2034325-5

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Kooperativer Bibliotheksverbund

Berlin Brandenburg