In:
Applied Physics Letters, AIP Publishing, Vol. 120, No. 3 ( 2022-01-17)
Abstract:
Negative differential resistance (NDR) in memristor has attracted considerable attention due to its nonlinear dynamic characteristic accompanied by resistive switching behavior. Here, we demonstrated the voltage-programmable NDR effect in an Au/LNO/Pt memristor based on a single-crystalline lithium niobate (SC-LNO) thin film tuned by low-energy Ar+ irradiation. A typical N-Shape NDR behavior occurs in reverse bias and can be programmed by changing the positive sweeping voltage. Moreover, thickness-dependent of the NDR behavior was also investigated. Thanks to the merit of the SC-LNO thin film, our memristor reveals excellent uniformity and reproducibility with low cycle-to-cycle variation (down to 1.82% for Ipeak and 2.94% for Vvalley). The carrier transport mechanism of our device is attributed to the interplay of trap-controlled space-charge-limited conduction (SCLC) and the Fowler–Nordheim (FN) tunneling. The transition from bulk-limited conduction (SCLC) to interfacial one (FN) tuned by Ar+ irradiation is crucial for our NDR devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2022
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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