In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 2S ( 2000-02-01), p. 745-
Abstract:
The crystallization behavior of nitrogen-doped amorphous Ge 2 Sb 2 Te 5 -(N) phase-change thin films was studied by utilizing differential scanning calorimetry, in situ ellipsometry and in situ transmission electron microscopy. The combined analysis of in situ ellipsometry isotherms of amorphous Ge 2 Sb 2 Te 5 -(N) films and the Johnson-Mehl-Avrami equation revealed that the crystallization process of amorphous Ge 2 Sb 2 Te 5 -(N) films changes depending on the nitrogen content. The crystallization behavior of Ge 2 Sb 2 Te 5 film revealed a two-step process that includes spherical-nucleation and disc-shaped grain growth. In contrast, nitrogen-doping into
Ge 2 Sb 2 Te 5 thin films suppresses the second step and the crystallization of
Ge 2 Sb 2 Te 5 -(N) becomes a one-step process that is the primary nucleation process. The number of nucleation sites during the crystallization of amorphous Ge 2 Sb 2 Te 5 -(N) films, increased markedly with the annealing temperature in the spherically shaped nuclei and eventually saturated. The effective crystallinity of
Ge 2 Sb 2 Te 5 -(N) alloy films decreased with the increase in nitrogen content, mainly due to the grain-size refinement.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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