In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 14, No. 9 ( 1999-09), p. 3525-3529
Abstract:
Thin Si 0.8 Ge 0.2 layers epitaxially grown on (100) Si substrates were oxidized at temperatures from 150 to 450 °C under vacuum ultraviolet (VUV) radiation emitted by an excimer lamp working with Xe (λ = 172 nm). The structure and composition of the grown dielectric layers were investigated by Rutherford backscattering spectrometry, nuclear reactions analysis, ellipsometry, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy. These investigations have shown that, during the VUV-assisted oxidation process, Ge atoms were initially rejected from the grown SiO 2 layer even at temperatures as low as those employed here. After a certain quantity of Ge accumulated at the interface, nanocrystalline Ge regions were directly excised from the remaining SiGe layer becoming embedded within the advancing SiO 2 layer. The layers containing these nanocrystalline Ge particles exhibited the same visible photoluminescence spectra as those recorded from layers already known to contain nanocrystalline Ge or GeO 2 particles, porous Ge, or nanocrystalline Ge particles exhibiting a different crystalline structure. This seems to indicate that the shell region of the nanocrystalline particle, and not its crystalline core, is the source of the photoluminescence.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/JMR.1999.0477
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1999
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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