In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6R ( 1993-06-01), p. 2818-
Abstract:
We report a photoemission study of Ag overlayers deposited on a hydrogenated amorphous silicon (a-Si:H) film at room temperature, using synchrotron radiation as a probe. Unlike the two other interfaces, Au/a-Si:H and Cr/a-Si:H, where the metal deposits start to intermix with the a-Si substrate after a critical thickness is exceeded, the Ag/a-Si:H interface is abrupt without any indication of intermixing. The non-intermixing nature is reminiscent of its crystalline counterpart. More interestingly, we have found a unique behavior of small metal adatoms on a-Si:H; that is, they reside favorably on the dangling-bond sites. Strong hydrogen passivation on the surface prevents the gathered adatoms from coalescing.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.2818
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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