In:
Journal of Applied Physics, AIP Publishing, Vol. 59, No. 11 ( 1986-06-01), p. 3921-3923
Abstract:
Rapid thermal heating of silicon samples in a dry O2 ambient has been used to form thin SiO2 films. Compared to conventional furnace oxidation, an increased growth rate was observed which is linearly dependent on the square root of time. Activation energies of 1.99 and 2.26 eV for 〈111〉 and 〈100〉 orientation, respectively, have been determined in the range 1000–1200 °C.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1986
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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