In:
npj 2D Materials and Applications, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2023-03-27)
Abstract:
Van der Waals (vdW) epitaxial growth of large-area and stable two-dimensional (2D) materials of high structural quality on crystalline substrates is crucial for the development of novel device technologies. 2D gallium monochalcogenides with low in-plane symmetry stand out among the layered semiconductor materials family for next-generation optoelectronic and energy conversion applications. Here, we demonstrate the formation of large-area, single crystal and optically active 2D monoclinic gallium telluride (m-GaTe) on silicon substrate via rapid thermal annealing induced phase transformation of vdW epitaxial metastable hexagonal gallium telluride (h-GaTe). Stabilization of multilayer h-GaTe on Si occurs due to the role of the first layer symmetry together with efficient GaTe surface passivation. Moreover, we show that the phase transformation of h-GaTe to m-GaTe is accompanied by the strain relaxation between Si substrate and GaTe. This work opens the way to the fabrication of single-crystal 2D anisotropic semiconductors on standard crystalline wafers that are difficult to be obtained by epitaxial methods.
Type of Medium:
Online Resource
ISSN:
2397-7132
DOI:
10.1038/s41699-023-00390-4
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2023
detail.hit.zdb_id:
2893016-2
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