In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 1A ( 2000-01-01), p. L56-
Abstract:
A nitrogen-doped columned-structure diamond field emitter (CSDFE) was fabricated by utilizing a molding technique on porous silicon (PS). The diamond film was deposited by the hot filament chemical vapor deposition method on a PS substrate after PS was seeded by diamond powder (less than 0.5 µm diameter) which acted as the nucleus. Electron emission and the stability of CSDFE were measured. It was found that at a lower electric field, that is, about 2.5 V/µm, the emission current of the CSDFE was higher than that prepared by an as-grown nitrogen-doped diamond field emitter. The emission current of the CSDFE was stable for a long operating time of over 8 h.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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