In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 11R ( 1991-11-01), p. 2693-
Abstract:
The chemical etching behavior of Ga(Al)As and In(Ga)P(As) containing sandwich layers grown by metalorganic vapor phase epitaxy has been investigated using various etching solutions. The chemical background is described by a potential-pH diagram. Activation energies obtained were between 0.28 and 0.46 eV. The inclination angle of the etched walls is mainly 55°. In both the systems, a transition from a reaction-rate limited process to a diffusion-rate-limited one is observed. In InP, a reactive intermediate with an inclination angle of 45° could be trapped.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.2693
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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