In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4R ( 2000-04-01), p. 1835-
Abstract:
As a preliminary examination for improving the reliability of the Cu metallization system of Si-LSI, we prepared Cu/Hf/Si, Cu/CuHf 2 /Hf/Si and Cu/HfN/Hf/Si contact systems, and compared their thermal stabilities. The change in crystal structure and the interdiffusion behavior were investigated by X-ray diffraction and Auger electron spectroscopy, respectively. In the case of Cu/CuHf 2 /Hf/Si, its thermal stability was slightly superior to that of Cu/Hf/Si without the CuHf 2 layer. However, slight outdiffusion of Si to the Cu surface was also observed, similar to the case of Cu/Hf/Si. On the other hand, the Cu/HfN/Hf/Si system was satisfactorily stable up to 630°C. In addition, it was revealed that Hf silicide containing Hf 3 Si 2 that has the lowest contact resistivity can be maintained at the Si interface up to 630°C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1835
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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