In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 5A ( 1999-05-01), p. L508-
Abstract:
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed by reflection high energy electron diffraction and preferential etching.
In the GaAs/Ge/GaAs (100) system, the sublattice reversal is assisted by self-annihilation of the antiphase domains generated at the
GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal results from the unique structure of the As-terminated Ge (111) surfaces.
The quality of the sublattice-reversed GaAs crystal is investigated using cross-sectional transmission electron microscopy. A method to
fabricate a periodically domain-inverted structure using sublattice reversal epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L508
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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