In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 160 ( 1989)
Abstract:
Single crystal layers of gallium arsenide have been grown on 〈 111 〉 and 〈 100 〉 oriented GaAs substrates using a flowing solution of gallium saturated with GaAs. With this novel technique, growth rates as high as 9.Oµm/min have been achieved for 5 minutes, while rates of approximately Aµmlmin are typically achieved for 20 minutes of growth. These figures are in good agreement with a previously developed theoretical model and are about two orders of magnitude greater than those for conventional, static solution, liquid phase epitaxy (LPE) for layer thicknesses greater than lµm. Undoped, p-doped and n-doped layers of high crystallographic and electronic quality have been grown. A description of the technique and some of the electro-optical properties are presented in this paper.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-160-451
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1989
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