In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 2A ( 1991-02-01), p. L149-
Abstract:
High conducting ITO films were deposited by DC magnetron sputtering using ITO targets. At substrate temperatures of 200°C and 300°C ITO films were reproducibly prepared with resistivities of 1.9×10 -4 Ω·cm respectively 1,4×10 -4 Ω·cm at a deposition rate of 20 Å/s. ITO films prepared at room temperature show after annealing at 200°C in air, nitrogen or vacuum the same low resistivity of 1.9×10 -4 Ω·cm when using optimum sputtering conditions. The influence of the deposition temperature on the electrical, optical and etching properties was studied and related to the structure of the ITO films. Details on an optimized in line sputtering system for the economic large scale production of ITO films are presented.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L149
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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